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| APTGF30A60T1G Phase leg NPT IGBT Power Module 5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11 VCES = 600V IC = 30A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 42 30 100 20 140 60A@500V Unit V August, 2007 1-6 APTGF30A60T1G - Rev 0 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF30A60T1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 30A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 30A RG = 6.8 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 30A RG = 6.8 VGE = 15V Tj = 125C VBus = 400V IC = 30A Tj = 125C RG = 6.8 Min Typ Max 250 500 2.45 6 400 Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 Max Unit A V V nA Unit pF 1.7 4 2.0 2.2 Dynamic Characteristics Min nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 25A IF = 50A IF = 25A IF = 25A VR = 400V di/dt =200A/s Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C trr Qrr Reverse Recovery Time Reverse Recovery Charge 30 175 55 485 ns nC www.microsemi.com 2-6 APTGF30A60T1G - Rev 0 August, 2007 25 1.8 2.2 1.6 2.2 V APTGF30A60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.9 1.4 150 125 100 4.7 80 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF30A60T1G - Rev 0 August, 2007 APTGF30A60T1G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) TJ=25C 250s Pulse Test < 0.5% Duty cycle 80 Ic, Collector Current (A) 250s Pulse Test < 0.5% Duty cycle 60 TJ=125C 37.5 TJ=25C 40 25 TJ=125C 20 12.5 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 80 VGE, Gate to Emitter Voltage (V) 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 30A TJ = 25C VCE=120V VCE=300V VCE=480V 4 18 250s Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) 16 14 12 10 8 6 4 2 0 0 60 40 TJ=125C TJ=25C 20 0 0 1 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 2 10 20 40 60 80 100 120 Gate Charge (nC) On state Voltage vs Junction Temperature VCE, Collector to Emitter Voltage (V) 4 Ic=60A VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12 Ic=15A Ic=30A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=60A 3 Ic=30A 2 Ic=15A 1 250s Pulse Test < 0.5% Duty cycle VGE = 15V 0 25 50 75 100 TJ, Junction Temperature (C) 125 14 16 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) DC Collector Current vs Case Temperature 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (C) 1.10 1.00 0.90 25 50 75 100 125 TJ, Junction Temperature (C) www.microsemi.com 4-6 APTGF30A60T1G - Rev 0 0.80 August, 2007 APTGF30A60T1G Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 50 125 Turn-Off Delay Time vs Collector Current 40 VGE = 15V 100 VGE=15V, TJ=25C VGE=15V, TJ=125C 30 Tj = 125C VCE = 400V RG = 6.8 75 20 50 VCE = 400V RG = 6.8 10 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 40 30 20 10 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70 VGE=15V, TJ=125C VCE = 400V RG = 6.8 25 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 40 tf, Fall Time (ns) tr, Rise Time (ns) 30 20 TJ = 125C TJ = 25C 10 VCE = 400V, VGE = 15V, RG = 6.8 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70 Eoff, Turn-off Energy Loss (mJ) Turn-On Energy Loss vs Collector Current 1 Eon, Turn-On Energy Loss (mJ) VCE = 400V RG = 6.8 TJ=125C, VGE=15V 2 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 6.8 TJ = 125C 0.75 0.5 0.25 0 0 1.5 1 0.5 0 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 70 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 1 Switching Energy Losses (mJ) IC, Collector Current (A) Eoff, 30A 60 50 40 30 20 10 0 0 100 200 300 400 500 600 0.75 Eon, 30A 0.5 0.25 0 0 5 10 15 20 Gate Resistance (Ohms) 25 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF30A60T1G - Rev 0 VCE = 400V VGE = 15V TJ= 125C August, 2007 APTGF30A60T1G Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Cies Operating Frequency vs Collector Current 280 240 200 160 120 80 40 0 0 10 20 30 hard switching ZVS 1000 Coes VCE = 400V D = 50% RG = 6.8 TJ = 125C TC= 75C ZCS 100 Cres 10 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V) 40 50 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Single Pulse 0 0.00001 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF30A60T1G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein August, 2007 |
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